issue 3 - march 2008 1 www.zetex.com ? zetex semiconductors plc 2008 ZXTN25100DFH 100v, sot23, npn medium power transistor summary bv cex > 180v bv ceo > 100v bv eco > 6v i c(cont) = 2.5a v ce(sat) < 95mv @ 1a r ce(sat) = 86m p d = 1.25w complementary part number zxtp25100dfh description advanced process capability and package design have been used to maximise the power handling and pe rformance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? high power dissipation sot23 package ?high gain ? low saturation voltage ? 180v forward blocking voltage ? 6v reverse blocking voltage application ? motor control ?dc fans ? dc-dc converters ? lamp, relay, and solenoid driving ordering information device marking 1b5 device reel size (inches) tape width (mm) quantity per reel ZXTN25100DFHta 7 8 3,000 c e b c e b pinout - top view
ZXTN25100DFH issue 3 - march 2008 2 www.zetex.com ? zetex semiconductors plc 2008 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 180 v collector-emitter voltage (forward blocking) v cex 180 v collector-emitter voltage v ceo 100 v emitter-collector voltage (reverse blocking) v eco 6v emitter-base voltage v ebo 7v continuous collector current (c) i c 2.5 a base current i b 0.5 a peak pulse current i cm 3a power dissipation at t amb =25c (a) p d 0.73 w linear derating factor 5.84 mw/c power dissipation at t amb =25c (b) p d 1.05 w linear derating factor 8.4 mw/c power dissipation at t amb =25c (c) p d 1.25 w linear derating factor 9.6 mw/c power dissipation at t amb =25c (d) p d 1.81 w linear derating factor 14.5 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
ZXTN25100DFH issue 3 - march 2008 3 www.zetex.com ? zetex semiconductors plc 2008 characteristics
ZXTN25100DFH issue 3 - march 2008 4 www.zetex.com ? zetex semiconductors plc 2008 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 180 220 v i c = 100 a collector-emitter breakdown voltage (forward blocking) bv cex 180 220 v i c = 100 a, r be 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) bv ceo 100 130 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo 78.3 vi e = 100 a emitter-collector breakdown voltage (reverse blocking) bv ecx 68.2 vi e = 100 a, r bc 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 68.7 vi e = 100 a, collector-base cut-off current i cbo <1 50 0.5 na a v cb = 180v v cb = 180v, t amb = 100c collector-emitter cut-off current i cex - 100 na v ce = 144v; r be 1k or -1v < v be < 0.25v emitter-base cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 120 170 mv i c = 0.5a, i b = 10ma (*) 80 95 mv i c = 1a, i b = 100ma (*) 215 330 mv i c = 2.5a, i b = 250ma (*) base-emitter saturation voltage v be(sat) 910 1000 mv i c = 2.5a, i b = 250ma (*) base-emitter turn-on voltage v be(on) 860 950 mv i c = 2.5a, v ce = 2v (*) static forward current transfer ratio h fe 300 450 900 i c = 10ma, v ce = 2v (*) 120 170 i c = 0.5a, v ce = 2v (*) 40 60 i c = 1a, v ce = 2v (*) 20 i c = 2.5a, v ce = 2v (*) transition frequency f t 175 mhz i c = 100ma, v ce = 10v f = 100mhz output capacitance c obo 8.7 15 pf v cb = 10v, f = 1mhz (*) delay time t d 16.4 ns v cc = 10v. i c = 500ma, i b1 = i b2 = 50ma. rise time t r 115 ns storage time t s 763 ns fall time t f 158 ns
ZXTN25100DFH issue 3 - march 2008 5 www.zetex.com ? zetex semiconductors plc 2008 typical characteristics
ZXTN25100DFH issue 3 - march 2008 6 www.zetex.com ? zetex semiconductors plc 2008 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh kustermann-park d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.12 - 0.044 e1 1.90 nom 0.075 nom a1 0.01 0.10 0.0004 0.004 e 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 e1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 l 0.25 0.60 0.0098 0.0236 d 2.80 3.04 0.110 0.120 l1 0.45 0.62 0.018 0.024 e0.95 nom0.037 nom----- e e l e1 d a c e1 l1 a1 b 3 leads
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